Mono c-Si wafer, 6 inch

GrowthMethod

CZ

ConductivityType

P

Dopant

Boron

Crystal Orientation

＜100＞±1°

Dislocation

None

Resistivity

1~3Ω.cm

Diagonal

150±0.5mm

Side Length

125±0.5mm

Thickness

200±20μm

TTV

≤20μm

Bow

≤40μm

Saw Mark

≤15μm

Oxygen Concentration oncentration

≤1.0×1018 atom/cm3

Life Time

≥10μs

Carbon Concentration

≤5.0×1016 atom/cm3

Surface Condition

no invisible crack, no stain